SUP70N03-09P

SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.015 @ VGS = 4.5 V ID (A) "70a "55 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP70N03-09 SUB70N03-09 N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit "30 "20 "70a "50 "180 "45 101 93c –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70821 S-59917—Rev. A, 28-Sep-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.6 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB70N03-09P Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 24 V,...