Document
Preliminary data
SPP06N80C2
Cool MOS™ Power Transistor
Feature
· · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity
Product Summary
VDS RDS(on) ID
800 900 6
P-TO220-3-1
V mW A
Type SPP06N80C2
Package P-TO220-3-1
Ordering Code Q67040-S4351
Marking SPP06N80C2
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol
Value 6 3.8 18 230 0.2 6 6 ±20 83 -55... +150
Unit A
ID
Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse
ID=1.5A, V DD=50V
ID puls EAS EAR IAR
dv/dt
mJ
Avalanche energy, repetitive t AR limited by Tjmax1)
ID=6A, V DD=50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS=6A, VDS < VDD, di/dt=100A/µs, T jmax=150°C
A V/ns V W °C
Gate source voltage Power dissipation
TC = 25 °C
VGS Ptot Tj , Tstg
Page 1
Operating and storage temperature
2000-05-29
Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at T j = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=0.25mA
SPP06N80C2
Symbol min.
Values typ. max. 1.5 62 0.67 260
Unit
RthJC RthJA Tsold
-
K/W W/K °C
V(BR)DSS V(BR)DS VGS(th) IDSS
800 2
870 3
4
V
Drain-source avalanche breakdown voltage
V GS=0V, ID=6A
Gate threshold voltage, VGS = VDS
ID=250µA
Zero gate voltage drain current
V DS = 800 V, V GS = 0 V, T j = 25 °C V DS = 800 V, V GS = 0 V, T j = 150 °C
µA 0.5 780 0.7 10 100 100 900 nA mW
Gate-source leakage current
V GS=20V, V DS=0V
IGSS RDS(on) RG
Drain-source on-state resistance
V GS=10V, I D=3.8A, T j=25°C
Gate input resistance
W
f = 1 MHz, open drain
1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV Page 2 2000-05-29
Preliminary data
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min.
SPP06N80C2
Values typ. 4 785 390 20 22 42 25 15 48 8 max. 60 13
Unit
g fs Ciss Coss Crss
V DS³2*ID*R DS(on)max , ID=3.8A V GS=0V, VDS=25V, f=1MHz
-
S pF
Effective output capacitance, 1) Co(er)
V GS=0V, V DS=0V to 640 V
pF
t d(on) tr t d(off) tf
V DD=400V, VGS=0/10V, ID=6A, RG=12W, T j=125°C
-
ns
Q gs Q gd Qg
V DD=640V, ID=6A
-
2.5 9.8 19.4 6
25 -
nC
V DD=640V, ID=6A, V GS=0 to 10V
V(plateau) V DD=640V, ID=6A
V
1C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V .
o(tr) oss DS DSS
Page 3
2000-05-29
Preliminary data
Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions min.
SPP06N80C2
Values typ. 1 520 5 17 400 max. 6 18 1.2 -
Unit
IS I SM VSD t rr Q rr
T C=25°C
-
A
V GS=0V, IF=IS V R=400V, I F=I S ,
diF/dt=100A/µs
-
V ns µC A A/µs
Peak reverse recovery current I rrm Peak rate of fall of reverse di rr/dt recovery current Transient Thermal Characteristics Symbol Value typ. Transient thermal impedance Thermal resistance Unit Symbol
Value typ.
Unit
Thermal capacitance 0.023 0.033 0.067 0.189 0.208 0.076 K/W
Rth1 Rth2 Rth3 Rth4 Rth5 Rth6
Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
0.000135 0.000438 0.000313 0.00149 0.00738 0.068
Ws/K
Tj P tot (t)
R th1
R th,n
T case
E xternal H eatsink
C th1
C th2
C th,n T am b
Page 4
2000-05-29
Preliminary data
1 Power dissipation 2 Drain current
SPP06N80C2
Ptot = f (TC)
SPP06N80C2
ID = f (TC )
parameter: VGS ³ 10 V
SPP06N80C2
100
6.5
W
80 70
A
5.5 5.0 4.5
Ptot
ID
20 40 60 80 100 120
60 50
4.0 3.5 3.0
40 30 20 10 0 0
2.5 2.0 1.5 1.0 0.5
°C
160
0.0 0
20
40
60
80
100
120
°C
160
TC
TC
3 Safe operating area
4 Transient thermal impedance
I D = f ( V DS )
parameter : D = 0 , T C=25°C
10
2
ZthJC = f (tp )
parameter : D = tp /T
10 1
SPP06N80C2
SPP06N80C2
K/W A
tp = 32.0 µs
10 0
10 1
Z thJC
10 -1
ID
V
DS
/I
100 µs
D
10 -2 D = 0.50 0.20
1 ms
10
0
R
DS (
on )
=
10
-3
0.10 0.05 0.02
10 ms
10 -4
single pulse
0.01
10 -1 0 10
10
1
10
2
V
DC
10
3
10 -5 -7 10
10
-6
10
-5
10
-4
.