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SPP06N80C2 Dataheets PDF



Part Number SPP06N80C2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPP06N80C2 DatasheetSPP06N80C2 Datasheet (PDF)

Preliminary data SPP06N80C2 Cool MOS™ Power Transistor Feature · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 800 900 6 P-TO220-3-1 V mW A Type SPP06N80C2 Package P-TO220-3-1 Ordering Code Q67040-S4351 Marking SPP06N80C2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Con.

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Preliminary data SPP06N80C2 Cool MOS™ Power Transistor Feature · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 800 900 6 P-TO220-3-1 V mW A Type SPP06N80C2 Package P-TO220-3-1 Ordering Code Q67040-S4351 Marking SPP06N80C2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol Value 6 3.8 18 230 0.2 6 6 ±20 83 -55... +150 Unit A ID Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=1.5A, V DD=50V ID puls EAS EAR IAR dv/dt mJ Avalanche energy, repetitive t AR limited by Tjmax1) ID=6A, V DD=50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS=6A, VDS < VDD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature 2000-05-29 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at T j = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V GS=0V, ID=0.25mA SPP06N80C2 Symbol min. Values typ. max. 1.5 62 0.67 260 Unit RthJC RthJA Tsold - K/W W/K °C V(BR)DSS V(BR)DS VGS(th) IDSS 800 2 870 3 4 V Drain-source avalanche breakdown voltage V GS=0V, ID=6A Gate threshold voltage, VGS = VDS ID=250µA Zero gate voltage drain current V DS = 800 V, V GS = 0 V, T j = 25 °C V DS = 800 V, V GS = 0 V, T j = 150 °C µA 0.5 780 0.7 10 100 100 900 nA mW Gate-source leakage current V GS=20V, V DS=0V IGSS RDS(on) RG Drain-source on-state resistance V GS=10V, I D=3.8A, T j=25°C Gate input resistance W f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV Page 2 2000-05-29 Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min. SPP06N80C2 Values typ. 4 785 390 20 22 42 25 15 48 8 max. 60 13 Unit g fs Ciss Coss Crss V DS³2*ID*R DS(on)max , ID=3.8A V GS=0V, VDS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 640 V pF t d(on) tr t d(off) tf V DD=400V, VGS=0/10V, ID=6A, RG=12W, T j=125°C - ns Q gs Q gd Qg V DD=640V, ID=6A - 2.5 9.8 19.4 6 25 - nC V DD=640V, ID=6A, V GS=0 to 10V V(plateau) V DD=640V, ID=6A V 1C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . o(tr) oss DS DSS Page 3 2000-05-29 Preliminary data Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions min. SPP06N80C2 Values typ. 1 520 5 17 400 max. 6 18 1.2 - Unit IS I SM VSD t rr Q rr T C=25°C - A V GS=0V, IF=IS V R=400V, I F=I S , diF/dt=100A/µs - V ns µC A A/µs Peak reverse recovery current I rrm Peak rate of fall of reverse di rr/dt recovery current Transient Thermal Characteristics Symbol Value typ. Transient thermal impedance Thermal resistance Unit Symbol Value typ. Unit Thermal capacitance 0.023 0.033 0.067 0.189 0.208 0.076 K/W Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.000135 0.000438 0.000313 0.00149 0.00738 0.068 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2000-05-29 Preliminary data 1 Power dissipation 2 Drain current SPP06N80C2 Ptot = f (TC) SPP06N80C2 ID = f (TC ) parameter: VGS ³ 10 V SPP06N80C2 100 6.5 W 80 70 A 5.5 5.0 4.5 Ptot ID 20 40 60 80 100 120 60 50 4.0 3.5 3.0 40 30 20 10 0 0 2.5 2.0 1.5 1.0 0.5 °C 160 0.0 0 20 40 60 80 100 120 °C 160 TC TC 3 Safe operating area 4 Transient thermal impedance I D = f ( V DS ) parameter : D = 0 , T C=25°C 10 2 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP06N80C2 SPP06N80C2 K/W A tp = 32.0 µs 10 0 10 1 Z thJC 10 -1 ID V DS /I 100 µs D 10 -2 D = 0.50 0.20 1 ms 10 0 R DS ( on ) = 10 -3 0.10 0.05 0.02 10 ms 10 -4 single pulse 0.01 10 -1 0 10 10 1 10 2 V DC 10 3 10 -5 -7 10 10 -6 10 -5 10 -4 .


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