VEC2605

Ordering number : ENN8197 VEC2605 P-Channel and N-Channel Silicon MOSFET VEC2605 Features General-Purpose Switching Device Applications Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions P-channel N-channel 20 ±10 3 12 0.9 Unit V V A A W °C °C -20 ±10 --1 --4 0.8 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=--500mA, VGS=--4V ID=--300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz --20 --1 ±10 --0.4 0.72 1.2 380 540 115 23 15 500 760 --1.4 V µA µA V S mΩ mΩ pF pF pF Symbol Conditions Ratings min typ ...