Document
Ordering number : ENN8198
VEC2901
VEC2901
Features
• •
TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET
Switching, Flash Applications
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 30 ±10 150 600 0.25 150 --55 to +150 V V mA mA W °C °C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (900mm2!0.8mm) 1unit 100 50 6 5 8 1.1 150 --55 to +150 V V V A A W °C °C Symbol Conditions Ratings Unit
Electrical Characteristics at Ta=25°C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1.6A, IB=53mA IC=2A, IB=40mA 250 330 26 55 75 110 150 100 100 400 MHz pF mV mV nA nA Symbol Conditions Ratings min typ max Unit
Marking : AA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505EA TS IM TB-00001130 No.8198-1/6
VEC2901
Continued from preceding page.
Parameter Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0 0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 3.7 5.2 12.8 30 10 V µA µA V S Ω Ω Ω pF pF pF ns ns ns ns nC nC nC V Symbol VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=2A, IB=40mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Conditions Ratings min 100 50 6 30 360 22 typ 0.9 max 1.2 Unit V V V V ns ns ns
±10
1.3
Package Dimensions unit : mm 2240
0.25
0.3 8 7 6 5 0.15
Electrical Connection
8
7
6
5
0.25
1
2 2.9
3 0.65
4
1
2
3
4
1 : Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector
Top view
2.8
2.3
0.75
1 : Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector SANYO : VEC8
0.07
No.8198-2/6
VEC2901
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.≤1% ID=80mA RL=187.5Ω VDD=15V PW=20µs D.C.≤1% INPUT RB VR 50Ω + 100µF + 470µF IB1 IB2 OUTPUT
Switching TimeII Test Circuit
D
VOUT
RL
G
P.G
50Ω
S
VBE= --5V
VCC=25V
IC= --20IB1= 20IB2=2.5A
5.0
IC -- VCE
50m
[TR]
6
IC -- VBE
[TR] VCE=2V
4.5
4
0mA
30mA
A
Collector Current, IC -- A
60m
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
15mA
Collector Current, IC -- A
4.0
20mA
5
A
4
10mA 8mA 6mA
3
2mA
IB=0
0.2 0.4 0.6 0.8 1.0 IT08135
1
0 0
0.2
0.4
0.6
--25°C
0.8
25°C
4mA
2
Ta=75 °C
1.0 IT08136
Co.