FDP8880

FDP8880 / FDB8880 0 May 2008 FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET tmM 30V, 54A, 11.6mΩ Features rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. rDS(ON) Low gate charge High power and current handling capability Application „ DC / DC Converters RoHS Complicant GATE DRAIN (FLANGE) SOURCE TO-263AB FDB SERIES (FLANGE) DRAIN TO-220AB FDP SERIES SOURCE DRAIN GATE G D S ©2008 Fairchild Semiconductor Corporation FDP8880 / FDB8880 Rev. A1 1 www.fairchildsemicom FDP8880 / FDB8880 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 25oC, VGS = 4.5V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 54 48 11 Figure 4 31 55 0.37 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,...