BUK9219-55A

BUK9219-55A TrenchMOS™ logic level FET M3D300 Rev. 01 — 24 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9219-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads. x Motors, lamps and solenoids. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) drain (d) 2 1 Top view 3 MBK091 d g s MBB076 SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BUK9219-55A TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 5 V; ID = 25 A VGS = 4.5 V; ID = 25 A Typ − − − − 15 − Max 55 55 114 175 19 20 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source voltage (DC) drain-gate voltage (DC) gate-so...