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BC848CDXV6T5 Dataheets PDF



Part Number BC848CDXV6T5
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC848CDXV6T5 DatasheetBC848CDXV6T5 Datasheet (PDF)

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V 1 6 54.

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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V 1 6 54 2 3 http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) BC847CDXV6T1 (6) mAdc SOT-563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C °C/W 1G D MARKING DIAGRAMS 1L D 1G = BC847CDXV6T1, BC847CDXV6T5 1L = BC848CDXV6T1, BC848CDXV6T5 D = Date Code Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device BC847CDXV6T1 BC847CDXV6T5 Package SOT-563 SOT-563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel BC848CDXV6T1 BC848CDXV6T5 SOT-563 SOT-563 © Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 0 Publication Order Number: BC847CDXV6T1/D BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA) Collector - Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 mA) Emitter - Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) V(BR)CEO BC847CDXV6T1 BC848CDXV6T1 V(BR)CES BC847CDXV6T1 BC848CDXV6T1 V(BR)CBO BC847CDXV6T1 BC848CDXV6T1 V(BR)EBO BC847CDXV6T1 BC848CDXV6T1 ICBO 6.0 5.0 15 5.0 nA µA 50 30 V 50 30 V 45 30 V V ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V) hFE 420 VCE(sat) VBE(sat) VBE(on) 580 270 520 0.7 0.9 660 800 0.25 0.6 700 770 V V mV - SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz) fT Cobo NF 10 100 4.5 MHz pF dB http://onsemi.com 2 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 TYPICAL CHARACTERISTICS 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 Figure 1. Normalized DC Current Gain 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 1.0 Figure 2. “Saturation” and “On” Voltages VCE , COLLECTOR−EMITTER VOLTAGE (V) θVB, TEMPERATURE COEFFICIENT (mV/ °C) −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) 400 300 200 Figure 4. Base-Emitter Temperature Coefficient 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 1.0 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.3 0.45 1.0 1.35 0.5 0.5 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Dimensions in mm SOT-563 SOT-563 POWER DISSIPATION The power dissipation of the SOT-563 is a function of .


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