Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor
Product specification Supersedes data of 2003 Dec 15 2004 Nov 03
Philips Semiconductors
Product specification
20 V, 3 A NPN low VCEsat (BISS) transistor
FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5320X. MARKING TYPE NUMBER PBSS4320X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4320X SC-62 DESCRIPTION S44 MARKING CODE QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER
PBSS4320X
MAX. 20 3 5 105
UNIT V A A mΩ
collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance
DESCRIPTION
2 3 1
sym042
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
VERSION SOT89
plastic surface mounted package; collector pad for good heat transfer; 3 leads
2004 Nov 03
2
Philips Semiconductors
Product specification
20 V, 3 A NPN low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature − − − − −65 − −65 CONDITIONS open emitter open base open collector note 4 limited by Tj(max) − − − − − − MIN.
PBSS4320X
MAX. 20 20 5 3 5 0.5 550 1 1.4 1.6 +150 150 +150 V V V A A A
UNIT
mW W W W °C °C °C
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 03
3
Philips Semiconductors
Product specification
20 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4320X
handbook, halfpage
2
MLE372
Ptot (W)
1.6
(1) (2)
1.2
(3)
0.8
(4)
0.4
0 0 40 80 120 160 Tamb (°C)
(1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector.
(3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint.
Fig.2 Power derating curves.
2004 Nov 03
4
Philips Semiconductors
Product specification
20 V, 3 A NPN low VCEsat (BISS) transistor
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 note 3 note 4 Rth(j-s) Notes thermal resistance from junction to soldering point 225 125 90 80 16 VALUE
PBSS4320X
UNIT K/W K/W K/W K/W K/W
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
103 Zth (K/W) 102
(1) (2) (3) (4) (5) (6)
006aaa243
10
(7) (8) (9)
1
(10)
10−1 10−5
10−4
10−3
10−2
10−1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 03
5
Philips Semiconductors
Product specification
20 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4320X
103 Zth (K/W) 102
(1) (2) (3) (5) (6) (4)
006aaa244
10
(7) (8) (9)
1
(10)
10−1 10−5
10−4
10−3
10−2
10−1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
103 Zth (K/W) 102
(1) (2) (3) (5) (4)
006aaa245
10
(6) (7) (8) (9)
1
(10)
10−1 10−5
10−4
10−3
10−2
10−1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.3.