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PBSS4320X Dataheets PDF



Part Number PBSS4320X
Manufacturers NXP
Logo NXP
Description 20 V / 3 A NPN low VCEsat (BISS) transistor
Datasheet PBSS4320X DatasheetPBSS4320X Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Dec 15 2004 Nov 03 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPL.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Dec 15 2004 Nov 03 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5320X. MARKING TYPE NUMBER PBSS4320X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4320X SC-62 DESCRIPTION S44 MARKING CODE QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER PBSS4320X MAX. 20 3 5 105 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 1 sym042 3 2 1 Fig.1 Simplified outline (SOT89) and symbol. VERSION SOT89 plastic surface mounted package; collector pad for good heat transfer; 3 leads 2004 Nov 03 2 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature − − − − −65 − −65 CONDITIONS open emitter open base open collector note 4 limited by Tj(max) − − − − − − MIN. PBSS4320X MAX. 20 20 5 3 5 0.5 550 1 1.4 1.6 +150 150 +150 V V V A A A UNIT mW W W W °C °C °C 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 2004 Nov 03 3 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X handbook, halfpage 2 MLE372 Ptot (W) 1.6 (1) (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves. 2004 Nov 03 4 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 note 3 note 4 Rth(j-s) Notes thermal resistance from junction to soldering point 225 125 90 80 16 VALUE PBSS4320X UNIT K/W K/W K/W K/W K/W 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 006aaa243 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 03 5 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X 103 Zth (K/W) 102 (1) (2) (3) (5) (6) (4) 006aaa244 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 Zth (K/W) 102 (1) (2) (3) (5) (4) 006aaa245 10 (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.3.


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