RB050PS-30

RB050PS-30 Diodes Schottky barrier diode RB050PS-30 zExternal dimensions (Unit : mm) zApplications Rectifying small power (8) (7) (6) (5) zLand size figure 1pin mark φ1.4 0～0.1 5±0.1 0.5±0.05 6±0.1 4.7 1.1 0.75 ① 4.56 0.15 0.9±0.03 zFeatures 1) High power mold type. (TSOP8) 2) Low IR 3) High reliability 1.5 0.5±0.05 1.1 0.4－0.05 ＋0.1 (1) (2) (3) (4) 0.22 －0.05 0.9±0.05 1.27 0.635 5±0.1 0.5 ＋0.1 1.27 0.65 3.9 1.25 3.1 TSOP8 0.3 0.2±0.03 0.01±0.01 ROHM : TSOP8 zConstruction Silicon epitaxial planar ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 φ1.55±0.1 　　　　　 0 1.75±0.05 0.37±0.1 0.15 zStructure 5.5±0.05 1PIN φ1.55±0.05 6.4±0.1 8.0±0.1 1.2±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature (*1)Tc=100℃max Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 3 35 150 -40 to +150 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.425 200 Unit V µA Conditions IF=3.0A VR=30V 5.4±0.2 Rev.A 9.5±0.1 12.0±0.3 6.6 1/3 RB050PS-30 Diodes zElectrical characteristic curves 10 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 Ta=150℃ 1000000 100000 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 1000 100 10 1 0.1 0.001 0 100 200 300 400 500...