XN04401

Composite Transistors XN04401 (XN4401) Silicon PNP epitaxial planar type Unit: mm For general amplification ■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number 2SB0709A (2SB709A) × 2 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 300 150 −55 to +150 Unit V V V mA mA mW °C °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 Marking Symbol: 5K Internal Connection 4 5 6 Tr2 1.1+0.3 –0.1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Tr1 3 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT...