XP01401

Composite Transistors XP01401 (XP1401) Silicon PNP epitaxial planar type (0.425) Unit: mm 0.12+0.05 –0.02 For general amplification ■ Features Two elements incorporated into one package (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half 0.20±0.05 5 4 1.25±0.10 2.1±0.1 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 10˚ ■ Basic Part Number 2SB0709A (2SB709A) × 2 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 150 150 −55 to +150 Unit V V V mA mA mW °C °C Tr1 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 0 to 0.1 0.9+0.2 –0.1 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 5V Internal Connection 5 4 5˚ Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/ Large) Conditions IC = −10 µ...