US6X4

US6X4 Transistors Low frequency amplifier US6X4 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) (4) (3) 0.3 1.3 (5) (6) (2) (1) 0.65 0.65 0.77 0~0.1 zFeatures 1) A collector current is large. 2) VCE(sat) : max. 370mV At lc=1.5A / lB=75mA 0.2 1.7 2.1 0.2 1pin mark 0.15Max. ROHM : TUMT6 Abbreviated symbol : X04 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emiter-base voltage Collector current Power dissipation Junction temperature Range of storage temperautre zEquivalent circuit Unit V V V A A ∗1 mW ∗2 W ∗3 °C °C (6) (5) (4) Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 2 4 400 1.0 150 −55 to +150 0.85Max. 0.17 2.0 (1) (2) (3) ∗1 Single pluse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended Land Pattern ∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltae Collector-emitter breakdown voltae Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 180 − 280 20 Max. − − − 100 100 370 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1.5A, IB=75mA VCE=2V, IC=200mA ∗ VCE=2V, IE=−200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MH...