BUK9880-55A
TrenchMOS™ logic level FET
M3D087
Rev. 01 — 07 February 2001
Product specification
1. Description
N-channe...
BUK9880-55A
TrenchMOS™ logic level FET
M3D087
Rev. 01 — 07 February 2001
Product specification
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9880-55A in SOT223 (SC-73).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible.
3. Applications
s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
c c
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning - SOT223 (SC-73), simplified outline and symbol Description gate (g)
4
Simplified outline
Symbol
drain (d) source (s) drain (d)
1
Top view
d
g
2 3
MSB002 - 1
MBB076
s
SOT223 (SC-73)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BUK9880-55A
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 5 V; ID = 8 A; Tj = 25 °C VGS = 4.5 V; ID = 8 A; Tj = 25 °C VGS = 10 V; ID = 8 A; Tj = 25 °C Typ − − − − 68 − − Max 55 7 8 150 80 89 73 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
mΩ mΩ mΩ
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IDR IDRM...