Document
Preliminary data
Low VCE(sat) IGBT with Diode
Combi Pack
IXGP12N60U1 VCES
IC VCE(sat)
= = =
600 V 24 A 2.5 V
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH TC = 25 °C
Maximum Ratings 600 600 ±20 ±30 24 12 48 ICM = 20 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-220 AB
G
C
E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features International standard package JEDEC TO-220 AB IGBT with antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM
l l l l l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 250 2.5 ±100 2.5 V V µA mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 750 µA, VGE = 0 V = 250 µA, VGE = VGE
Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
l l l l l
VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V
l l
l l
Advantages Easy to mount with 1 screw Space savings (two devices in one package) Reduces assembly time and cost High power density
© 1996 IXYS All rights reserved
92792D (9/96)
IXGP12N60U1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 8 750 125 30 50 15 25 100 200 500 300 1.2 70 25 45 S pF pF pF nC nC nC ns ns ns ns mJ TO-220 AB Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 • VCES , RG = Roff = 150 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125° C IC = IC90, VGE = 15 V, L = 100 µ H VCE = 0.8 • VCES , RG = Roff = 150 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG
700 500 2.0
Dim. A B C D E F G H J K M N Q R
100 200 1 600 400 2
800 700
ns ns mJ ns ns mJ
0.25
1.25 K/W K/W
Millimeter Min. Max. 12.70 14.93 14.23 16.50 9.66 10.66 3.54 4.08 5.85 6.85 2.29 2.79 1.15 1.77 2.79 6.35 0.64 0.89 2.54 BSC 4.32 4.82 0.64 1.39 0.51 0.76 2.04 2.49
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.270 0.090 0.110 0.045 0.070 0.110 0.250 0.025 0.035 0.100 BSC 0.170 0.190 0.025 0.055 0.020 0.030 0.080 0.115
Reverse Diode (FRED) Symbol VF Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.75 V
IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs VR = 360 V TJ = 100 °C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25 °C 2.5 150 35
I RM trr
A ns 50 ns 2.5 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGP12N60U1
Fig. 1 Saturation Characteristics
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5
7V TJ = 25°C VGE=15V 13V 11V 9V
Fig. 2
100 90 80 70 60 50 40 30 20 10 0
T J = 25°C
Output Characterstics
V GE = 15V 13V
IC - Amperes
IC - Amperes
11V 9V 7V
0
2
4
6
8
10 12 14 16
18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25°C
Fig. 4
1.5 1.4
VGE = 15V
Temperature Dependence of Output Saturation Voltage
IC = 20A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
IC = 5A IC = 10A
VCE - Volts
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 20A IC = 10A IC = 5A
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10
T J = 25°C T J = 125°C TJ = - 40°C
Fig. 6
1.2
Temperature Dependence of Breakdown and Threshold Voltage
VGE(th) IC = 250µA
BV / VGE(th) - Normalized
VCE = 10 V
1.1 1.0 0.9 0.8 0.7 0.6 -50
IC - Amperes
BV CES IC = 250µA
-25
0
25
50
75
100 125 150
VGE - Volts
G N JNB
TJ - Degrees C
© 1996 IXYS All rights reserved
IXGP12N60U1
Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area
15 13 11
V CE = 480V IG = 10mA
100
10
T J = 125°C
9 7 5 3 1
IC - Amperes
VGE - Volts
IC = 10A
dV/dt .