CPH5818

Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3339) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 54 Low ON-resistance. Ultrahigh-speed switching. [SBD] Short reverse recovery time. Low forward voltage. 1 0.95 0.2 [CPH5818] 0.15 3 0.05 1.6 0.6 2.8 0.6 2 0.4 0.7 0.2 0.9 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.4 SANYO : CPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Marking : QU Symbol VDSS VGSS ID IDP PD Tch Tstg VRRM VRSM IO IFSM Tj Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 50Hz sine wave, 1 cycle Ratings --12 ±12 --1.5 --6.0 0.8 150 --55 to +125 15 15 0.5 3 --55 to +125 --55 to +125 Unit V V A A W °C °C V V A A °C °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as ...