N-Channel PowerTrench. FDQ7238S Datasheet

FDQ7238S Datasheet PDF, Equivalent


Part Number

FDQ7238S

Description

Dual Notebook Power Supply N-Channel PowerTrench

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDQ7238S Datasheet


FDQ7238S Datasheet
September 2003
FDQ7238S
Dual Notebook Power Supply N-Channel PowerTrench  in SO-14 Package
General Description
The FDQ7238S is designed to replace two single SO-8
MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology.
Features
Q2: 14 A, 30V. RDS(on) = 9.5 m@ VGS = 10V
RDS(on) = 10.5 m@ VGS = 4.5V
Q1: 11 A, 30V. RDS(on) = 14.5 m@ VGS = 10V
RDS(on) = 16 m@ VGS = 4.5V
SO-14
pin 1
S2
S2S2
G1G2
Vin
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a & 1b)
(Note 1c & 1d)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b)
(Note 1c & 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDQ7238S
FDQ7238S
13”
Q2 Q1
30 30
±16 ±16
14 11
50 50
2.4 1.8
1.3 1.1
55 to +150
52 68
94 118
Units
V
V
A
W
°C
°C/W
Tape width
16mm
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDQ7238S Rev A1 (W)

FDQ7238S Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 1 mA
VGS = 0 V,
ID = 250 µA
ID = 10 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
IGSSF
Gate-Body Leakage, Forward
VGS = 16 V, VDS = 0 V
IGSSR
Gate-Body Leakage, Reverse
VGS = 16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = VGS,
VDS = VGS,
ID = 1 mA
ID = 250 µA
ID = 10 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 14A, TJ = 125°C
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 11, TJ = 125°C
VGS = 10 V,
VGS = 10 V,
VDS = 5 V
VDS = 5 V
VDS = 10 V, ID = 14 A
VDS = 10 V, ID = 11 A
VDS = 15 V,
f = 1.0 MHz
VGS = 0 V,
VGS = 15 mVf = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 15 V,
VGS = 10V,
ID = 1 A,
RGEN = 6
Q2
VDS = 15 V, ID = 14A, VGS = 10 V
Q1
VDS = 15 V, ID = 11A,VGS = 10 V
Type Min Typ Max Units
Q2 30
Q1 30
V
Q2 26 mV/°C
Q1 25
Q2 500 µA
Q1 1
Q2 100 nA
Q1 100
Q2 100 nA
Q1 100
Q2 1 1.4 3
Q1 1 1.4 3
V
Q2 3 mV/°C
Q1 5
Q2 7 9.5 m
8 10.5
11 16
Q1 11 14.5
12 16
16 23
Q2 50
Q1 50
A
Q2 67
Q1 48
S
Q2 2872
Q1 1906
Q2 522
Q1 311
Q2 186
Q1 134
Q2 1.5
Q1 0.8
pF
pF
pF
Q2 14 25 nS
Q1 11 20
Q2 13 23 nS
Q1 13 23
Q2 51 82 nS
Q1 28 45
Q2 18 32 nS
Q1 15 27
Q2 48 67 nC
Q1 33 46
Q2 6
nC
Q1 4
Q2 8
nC
Q1 4
FDQ7238S Rev A1 (W)


Features Datasheet pdf FDQ7238S September 2003 FDQ7238S Dual Notebook Power Supply N-Channel PowerTr ench in SO-14 Package   General Descr iption The FDQ7238S is designed to repl ace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch ( Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to re duce conduction losses using Fairchild s SyncFET TM technology. Features Q2: 14 A, 30V. RDS(on) = 9.5 mΩ @ V GS = 10V RDS(on) = 10.5 mΩ @ VGS = 4. 5V • Q1: 11 A, 30V. RDS(on) = 14.5 m @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V SO-14 pin 1 Vin G1 G2 S2 S 2 S2 Absolute Maximum Ratings Symbol V DSS VGSS ID PD TJ, TSTG Drain-Source Vo ltage Gate-Source Voltage Drain Current TA = 25° C unless otherwise noted P arameter Q2 30 ±16 (Note 1a) Q1 30 16 11 50 1.8 1.1 −55 to +150 Units V V A W °C - Continuous - Pulsed Powe r Dissipation for Single Operation (No te 1a & 1b) (Note 1c & 1d) 14 50 2.4 1.3 Operating and Storage Junction Temperatur.
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