Document
PD - 90713E
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si) IRHE4230 IRHE8230 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.35 Ω 0.35 Ω 0.35 Ω 0.35 Ω ID 5.5A 5.5A 5.5A 5.5A
IRHE7230 JANSR2N7262U 200V, N-CHANNEL
REF: MIL-PRF-19500/601 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY
QPL Part Number JANSR2N7262U JANSF2N7262U JANSG2N7262U JANSH2N7262U
LCC - 18
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 5.5 3.5 22 25 0.2 ±20 240 — — 5.0 -55 to 150 300 ( for 5s) 0.42 (Typical)
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
02/01/01
IRHE7230, JANSR2N7262U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 — — — 2.0 2.5 — — — — — — — — — — — —
Typ Max Units
— 0.25 — — — — — — — — — — — — — — — 6.1 — — 0.35 0.36 4.0 — 25 250 100 -100 50 10 25 25 40 60 45 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 3.5A VGS = 12V, ID = 5.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 3.5A VDS= 160V,VGS=0V VDS = 160V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 5.5A VDS = 100V VDD = 100V, ID = 5.5A, VGS = 12V, RG = 7.5Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge.