Power MOSFET
PD - 97005
IRF6621
DirectFET Power MOSFET
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RoHs Compliant Containing No Lead and Bromide Low Pro...
Description
PD - 97005
IRF6621
DirectFET Power MOSFET
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RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.2nC
RDS(on) Qgs2
1.0nC
RDS(on) Qoss
6.9nC
30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V
Qrr
10nC
Vgs(th)
1.8V
11.7nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6621 balances both low resistance and low charge along with ultra low package inductance to reduce ...
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