Fast Switching EmCon Diode
IDP15E60 IDB15E60 Fast Switching EmCon Diode
Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low rev...
Description
IDP15E60 IDB15E60 Fast Switching EmCon Diode
Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C operating temperature Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
600 15 1.5 175
P-TO220-2-2.
V A V °C
Type IDP15E60 IDB15E60
Package P-TO220-2-2.
Ordering Code Q67040-S4485
Marking D15E60 D15E60
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4484
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25°C TC=90°C
Symbol VRRM IF
Value 600 29.2 19.6
Unit V A
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
60 45 W 83.3 47.2
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C TC=90°C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+175 255
°C °C
Rev.2
Page 1
2003-07-31
IDP15E60 IDB15E60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 1.8 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=600V, Tj=25°C V R=600V, Tj=150°C
Symbol min. IR VF...
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