Silicon Epitaxial Planar Pin Diode
HVD142
Silicon Epitaxial Planar Pin Diode for Antenna Switching
ADE-208-1117 (Z) Rev.0 Jan. 2001 Features
• Low capacit...
Description
HVD142
Silicon Epitaxial Planar Pin Diode for Antenna Switching
ADE-208-1117 (Z) Rev.0 Jan. 2001 Features
Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf=1.5 Ω max) Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD142 Laser Mark T2 Package Code SFP
Outline
Cathode mark Mark 1
T2
2 1. Cathode 2. Anode
HVD142
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 150 125 −55 to +125 Unit V mA mW °C °C
Electrical Characteristics(Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *
1
Symbol IR VF C rf —
Min — — — — 100
Typ — — — — —
Max 0.1 1.0 0.35 1.5 —
Unit µA V pF Ω V
Test Condition VR = 30 V I F = 10 mA VR = 1 V, f = 1 MHz I F = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.
Notes : 1. Failure criterion ; IR > 100 nA at V R =30 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
2
HVD142
Main Characteristic
10−2 10−7
10−4
10−8
Forward current IF (A)
Reverse current IR (A)
10−9 10−10 10−11 10−12 10−13
10
−6
10−8
10−10
10−12
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
103 f=1MHz f=100MHz
Forward resistance r f (Ω ...
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