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HVD142

Hitachi Semiconductor

Silicon Epitaxial Planar Pin Diode

HVD142 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1117 (Z) Rev.0 Jan. 2001 Features • Low capacit...


Hitachi Semiconductor

HVD142

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HVD142 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1117 (Z) Rev.0 Jan. 2001 Features Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf=1.5 Ω max) Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD142 Laser Mark T2 Package Code SFP Outline Cathode mark Mark 1 T2 2 1. Cathode 2. Anode HVD142 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 150 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics(Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability * 1 Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 0.1 1.0 0.35 1.5 — Unit µA V pF Ω V Test Condition VR = 30 V I F = 10 mA VR = 1 V, f = 1 MHz I F = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes : 1. Failure criterion ; IR > 100 nA at V R =30 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package. 2 HVD142 Main Characteristic 10−2 10−7 10−4 10−8 Forward current IF (A) Reverse current IR (A) 10−9 10−10 10−11 10−12 10−13 10 −6 10−8 10−10 10−12 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 103 f=1MHz f=100MHz Forward resistance r f (Ω ...




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