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IAM-92516 Dataheets PDF



Part Number IAM-92516
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description High Linearity GaAs FET Mixer
Datasheet IAM-92516 DatasheetIAM-92516 Datasheet (PDF)

Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA (Typ.) RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description Agilent Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has builtin LO buffer amplifier which requires -3 d.

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Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA (Typ.) RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description Agilent Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has builtin LO buffer amplifier which requires -3 dBm LO power to deliver an input third order intercept point of 27 dBm. LO port is 50 ohm matched and can be driven differential or single ended while IF port is 200 ohm matched and fully differential. RF port requires external matching network for optimum input return loss and IIP3 performance. RF and LO frequency range coverage from 400 to 3500 MHz and IF coverage is from DC to 300 MHz. This mixer consumes 26 mA of current from a single 5V supply. Conversion loss is typically 6 dB and noise figure is typically 12.5 dB. Excellent output power at 1 dB compression of 9 dBm. LO to IF, LO to RF and RF to IF isolation are greater than 30 dB. The IAM-92516 is ideally suited for frequency up/down conversion for base station radio card receiver and transmitter, microwave link transceiver, MMDS, modulation and demodulation for receiver and transmitter and general purpose resistive FET mixer, which require high linearity. All devices are 100% RF and DC tested. Pin Connections and Package Marking • High Linearity: 27 dBm IIP3 • Conversion Loss: 6 dB typical • Wide band operation: 400-3500 MHz RF & LO input DC – 300 MHz IF output • Fully differential or single ended operation • High P1dB: 9 dBm typical • Low current consumption: 5V@ 26 mA typical • Excellent uniformity in product specifications • Small LPCC 3.0 x 3.0 x 0.75 mm package Notes: Package marking provides orientation and identification “M3” = Device Code “X” = Month code indicates the month of manufacture • MTTF > 300 years[1] • MSL-1 and lead-free • Tape-and-Reel packaging option available Applications • Frequency up/down converter for base station radio card, microwave link transceiver, and MMDS • Modulation and demodulation for receiver and transmitter • General purpose resistive FET mixer for other high linearity applications Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. Notes: 1. Refer to reliability datasheet for detailed MTTF data. 2. Conform to JEDEC reference outline MO229 for DRP-N IAM-92516 Absolute Maximum Ratings [1] Parameter Device Voltage CW RF Input Power[2] CW LO Input Power[2] Channel Temperature Storage Temperature Units V dBm dBm °C °C Absolute Max. 10 +30 20 150 -65 to 150 Thermal Resistance[2,4] θch-c = 47.6°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions and TA = 25°C. 3. Board (package belly) temperature TB is 25°C. Derate 21 mW/°C for TB > 85°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. Electrical Specifications TA = 25°C, DC =5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO =1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified. Symbol FRF FLO FIF Id Gc[3] IIP3[2] NF[3] P1dB [3] RLRF RLLO RLIF ISOLL-R ISOLL-I ISOLR-L Parameter and Test Condition Frequency Range, RF Frequency Range, LO Frequency Range, IF Device Current Conversion Loss Input Third Order Intercept Point SSB Noise Figure Output Power at 1 dB Compression RF Port Return Loss LO Port Return Loss IF Port Return Loss LO-RF Isolation LO-IF Isolation RF-IF Isolation Units MHz MHz MHz mA dB dBm dB dBm dB dB dB dB dB dB Min. 400 400 DC 22 Typ. Max. 3500 3500 300 Std Dev.[1] 26 6 30 6.9 0.89 0.08 0.43 22 27 12.5 9 19 24 21 34 56 33 Notes: 1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product and is intended to be used as an estimate for distribution of the typical specification. 2. IIP3 test condition: FRF1 = 1.91 GHz, FRF2 = 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency FLO= 1.7 GHz. 3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz. Simplified Schematic Figure 1. IAM-92516 Test Board. 2 Figure 2. Schematic Diagram of IAM-92516 Test Circuit. 240 200 160 120 80 40 0 25 200 150 Cpk=3.7 Stdev=0.43 160 120 Cpk=1.5 Stdev=0.89 120 FREQUENCY Cpk=3.67 Stdev=0.079 FREQUENCY FREQUENCY –3 Std +3 Std 80 60 40 0 22 –3 Std +3 Std 90 –3 Std 60 +3 Std 30 26 27 IIP3 28 29 24 26 ID 28 30 0 -6.4 -6.2 -6 -5.8 -5.6 -5.4 CONVERSION LOSS LSL=22.0, Nominal=26.8 LSL=22.0, Nominal=26.0, USL=30.0 LSL=-6.9, Nominal=-6.0 Figure 3. Normal Distribution o.


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