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MGFK38A3745

Mitsubishi Electric Semiconductor

power GaAs FET

< X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is a...


Mitsubishi Electric Semiconductor

MGFK38A3745

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Description
< X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.) @f=13.75 – 14.50GHz  High linear power gain GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz  High power added efficiency P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz APPLICATION  13.75 – 14.50 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=1.5A  RG=100ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -10 PT *1 Total power dissipation 37.5 Tch Cannel temperature 175 Tstg Storage temperature *1 : Tc=25C -65 to +175 Unit V V...




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