power GaAs FET
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
DESCRIPTION
The MGFK38A3745 is a...
Description
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
DESCRIPTION
The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=6W (TYP.) @f=13.75 – 14.50GHz High linear power gain
GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz High power added efficiency
P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz
APPLICATION
13.75 – 14.50 GHz band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.5A RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-15
VGSO Gate to source breakdown voltage
-10
PT *1 Total power dissipation
37.5
Tch Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V V...
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