Silicon N Channel MOS FET
2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 m typ.
• 4 V ga...
Description
2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 4.3 m typ.
4 V gate drive device High speed switching
Outline
TO-220AB
D
G
S
ADE-208-941 (Z) 1st. Edition Mar. 2001
1 2 3
1. Gate 2. Drain (Flange) 3. Source
2SK3418
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current
VDSS VGSS ID I Note1
D (pulse)
I DR
Avalanche current Avalanche energy Channel dissipation
I Note3 AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg ≥ 50 Ω
Value 60 ±20 85 340 85
60 308 110 150 –55 to +150
Unit V V A A A
A mJ W °C °C
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
60
Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance
I GSS I DSS VGS(off) |yfs| RDS(on) RDS(on) Ciss
— — 1.0 55 — — —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Body-drain diode forward voltage
VDF —
Body-drain diode reverse trr — recovery time
Note: 4. ...
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