2SK3418

2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 4.3 m typ. 4 V gate drive device High speed switching Outline TO-220AB D G S ADE-208-941 (Z) 1st. Edition Mar. 2001 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 D (pulse) I DR Avalanche current Avalanche energy Channel dissipation I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg ≥ 50 Ω Value 60 ±20 85 340 85 60 308 110 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance I GSS I DSS VGS(off) |yfs| RDS(on) RDS(on) Ciss — — 1.0 55 — — — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body-drain diode forward voltage VDF — Body-drain diode reverse trr — recovery time Note: 4. ...