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PCHMB200B12A Dataheets PDF



Part Number PCHMB200B12A
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description IGBT MODULE
Datasheet PCHMB200B12A DatasheetPCHMB200B12A Datasheet (PDF)

www.DataSheet4U.net IGBT MODULE CIRCUIT Chopper 200A 1200V OUTLINE DRAWING PCHMB200B12A 2- fasten- tab No 110 Dimension(mm) MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 320g Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PCHMB200B12A 1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 3 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Vo.

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www.DataSheet4U.net IGBT MODULE CIRCUIT Chopper 200A 1200V OUTLINE DRAWING PCHMB200B12A 2- fasten- tab No 110 Dimension(mm) MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 320g Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PCHMB200B12A 1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 3 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 16600 0.25 0.40 0.25 0.80 Max. 4.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=400A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.125 0.24 PCHMB200B12A Fig.1- Output Characteristics (Typical) 400 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ I C=100A 400A VGE =20V 15V 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 200A Collector Current I C (A) 300 9V 200 8V 100 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 ℃ IC=100A 400A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 RL=3Ω TC=25℃ 14 Gate to Emitter Voltage V GE (V) 200A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 100 0 0 300 600 900 1200 200V 4 2 0 1500 0 4 8 12 16 20 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 20000 Fig.6- Collector Current vs. Switching Time (Typical) 1.4 1.2 V GE =0V f=1MHZ TC=25 ℃ Cies VCC=600V RG= 2.0 Ω VGE = ± 15V TC=25 ℃ Switching Time t (μ s) Capacitance C (pF) 1 0.8 0.6 0.4 0.2 0 10000 5000 2000 1000 500 tOFF Coes tf Cres 200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 tON tr 0 50 100 150 200 Collector to Emitter Voltage V CE (V) Collector Current IC (A) PCHMB200B12A Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 400 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25 ℃ TC=125 ℃ VCC=600V IC=200A VGE = ± 15V TC=25 ℃ toff ton Switching Time t (μ s) 2 1 0.5 Forward Current I F (A) tr 300 200 tf 0.2 0.1 0.05 100 1 2 5 10 20 50 100 200 0 0 1 2 3 4 Series Gate Impedance R G ( Ω ) Forward Voltage V F (V) Fig.9- Reverse Recovery Characteristics (Typical) 1000 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 500 200 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 IF=200A TC=25℃ R G=2 Ω V GE = ± 15V TC≦ 125 ℃ 200 100 50 Collector Current I C (A) 200 400 600 800 1000 1200 100 50 20 10 5 2 1 0.5 0.2 trr 20 IRrM 10 5 0 0.1 0 400 800 1200 1600 -di/dt (A/μs) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 1 (℃/W) 5x10 -1 2x10 -1 FRD IGBT (J-C) 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 Transient Thermal Impedance Rth TC=25℃ 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 10 -5 Time t (s) .


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