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IXTA180N055T
(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Description
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-22...
IXYS Corporation
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IXTA180N055T
(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
- IXYS Corporation
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