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IRFU3412 Dataheets PDF



Part Number IRFU3412
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRFU3412 DatasheetIRFU3412 Datasheet (PDF)

PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability l IRFR3412 IRFU3412 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 48A† D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings.

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PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability l IRFR3412 IRFU3412 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 48A† D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second Mounting torqe, 6-32 or M3 screw Max. 48† 34† 190 140 0.95 ± 20 6.4 -55 to + 175 300(1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– 48† 190 A ––– ––– 1.3 V „ ––– 68 100 ns ––– 160 240 nC ––– 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 29A, VGS = 0V TJ = 125°C, IF = 29A di/dt = 100A/µs „ D S www.irf.com 1 1/22/02 IRFR/U3412 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.5 ––– ––– ––– ––– Typ. ––– 0.10 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 0.025 Ω VGS = 10V, ID = 29A „ 5.5 V VDS = VGS, ID = 250µA 1.0 VDS = 95V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 59 21 17 19 68 44 37 3430 270 150 1040 170 270 Max. Units Conditions ––– S VDS = 50V, ID = 29A 89 ID = 29A 32 nC VDS = 50V 26 VGS = 10V, „ ––– VDD = 50V ––– ID = 29A ns ––– RG = 6.8Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 160 29 14 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA RθJA Notes: Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 1.05 50 110 Units °C/W  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 0.38mH, RG = 25Ω, IAS = 29A, (See Figure 12a) ƒ ISD ≤ 29A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, T J ≤ 150°C †Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com IRFR/U3412 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP 100 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) BOTTOM BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 1 10 0.1 4.5V 4.5V 0.01 0.1 1 20µs PULSE WIDTH T J= 25 ° C 10 100 20µs PULSE WIDTH T J= 175 ° C 1 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I D = 48A 2.5 RDS(on) , Drain-to-Source On Resistance I D, Drain-to-Source Current (A) 100 10 (Normalized) T = 175 ° C J 2.0 1.5 ° T J = 25 C 1 1.0 0.5 V DS= 25V 20µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 9.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4..


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