Document
PD - 94373
SMPS MOSFET
Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability
l
IRFR3412 IRFU3412
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.025Ω
ID
48A
D-Pak IRFR3412
I-Pak IRFU3412
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second Mounting torqe, 6-32 or M3 screw
Max. 48 34
190 140 0.95 ± 20 6.4 -55 to + 175 300(1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V V/ns °C
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr IRRM ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time
Min. Typ. Max. Units ––– ––– ––– ––– 48 190 A
––– ––– 1.3 V ––– 68 100 ns ––– 160 240 nC ––– 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 29A, VGS = 0V TJ = 125°C, IF = 29A di/dt = 100A/µs
D
S
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1
1/22/02
IRFR/U3412
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.5 ––– ––– ––– ––– Typ. ––– 0.10 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.025 Ω VGS = 10V, ID = 29A 5.5 V VDS = VGS, ID = 250µA 1.0 VDS = 95V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 59 21 17 19 68 44 37 3430 270 150 1040 170 270 Max. Units Conditions ––– S VDS = 50V, ID = 29A 89 ID = 29A 32 nC VDS = 50V 26 VGS = 10V, ––– VDD = 50V ––– ID = 29A ns ––– RG = 6.8Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
160 29 14
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθJA RθJA Notes: Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.05 50 110
Units
°C/W
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.38mH, RG = 25Ω,
IAS = 29A, (See Figure 12a)
ISD ≤ 29A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
T J ≤ 150°C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U3412
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP
100
I D, Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
BOTTOM
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
10
1
10
0.1
4.5V
4.5V
0.01 0.1 1
20µs PULSE WIDTH T J= 25 ° C
10 100
20µs PULSE WIDTH T J= 175 ° C
1 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
I D = 48A
2.5
RDS(on) , Drain-to-Source On Resistance
I D, Drain-to-Source Current (A)
100
10
(Normalized)
T = 175 ° C J
2.0
1.5
° T J = 25 C 1
1.0
0.5
V DS= 25V 20µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 9.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
V GS , Gate-to-Source Voltage (V)
TJ , Junction Temperature
( °C)
Fig 3. Typical Transfer Characteristics
Fig 4..