IRFR3711

PD- 94061 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l IRFR3711 IRFU3711 HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.5mΩ ID 110A„ D-Pak IRFR3711 I-Pak IRFU3711 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation… Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 110 „ 69 „ 440 2.5 120 0.96 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)… Junction-to-Ambient Typ. ––– ––– ––– Max. 1.04 50 110 Units °C/W Notes  through „ are on page 10 www.irf.com 1 2/7/01 IRFR/U3711 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-t...