IRFR3505

PD - 94506A AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features ● ● ● ● ● IRFR3505 IRFU3505 VDSS = 55V Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D G S RDS(on) = 0.013Ω ID = 30A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRFR3505 I-Pak IRFU3505 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single...