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IRFU3504 Dataheets PDF



Part Number IRFU3504
Manufacturers International Rectifier
Logo International Rectifier
Description AUTOMOTIVE MOSFET
Datasheet IRFU3504 DatasheetIRFU3504 Datasheet (PDF)

PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 40V RDS(on) = 9.2mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C j.

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PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 40V RDS(on) = 9.2mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ID = 30A D-Pak IRFR3504 I-Pak IRFU3504 Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100°C = 25°C = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current Repetitive Avalanche Energy† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 87 61 30 350 140 0.92 ± 20 240 480 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A VGS EAS EAS (tested) IAR EAR TJ TSTG W W/°C V mJ A mJ °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)ˆ Junction-to-Ambient Typ. ––– ––– ––– Max. 1.09 50 110 Units °C/W HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 12/11/02 IRFR/U3504 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … Min. 40 ––– ––– 2.0 40 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.041 7.8 ––– ––– ––– ––– ––– ––– 48 12 13 11 53 36 22.


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