STGW50NB60H

® STGW50NB60H N-CHANNEL 50A - 600V TO-247 PowerMESH™ IGBT PRELIMINARY DATA TYPE STGW50NB60H s V CES 600 V V CE(sat) < 2.8 V IC 50 A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT 1 2 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V ECR V GE IC IC ICM ( ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 20 ± 20 100 50 400 250 2 -65 to 150 150 Unit V V V A A A W W/ o C o o C C () Pulse width limited by safe operating area June 1999 1/5 STGW50NB60H THERMAL DATA R thj-case R thj-amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal R...