Document
STGW20NB60KD
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE STGW20NB60KD
s s s s s s s s s
VCES 600 V
VCE(sat) < 2.8 V
IC 20 A
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION
3 2 1
TO-247
DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s U.P.S. s WELDING EQUIPMENTS
ORDERING INFORMATION
SALES TYPE STGW20NB60KD MARKING GW20NB60KD PACKAGE TO-247 PACKAGING TUBE
August 2003
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STGW20NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 40 20 80 10 150 1.2 – 55 to 150 Unit V V V A A A
µs
W W/°C °C
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.83 50 °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ±20V , VCE = 0 Min. 600 10 100 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250µA VGE = 15V, IC = 20 A VGE = 15V, IC = 20 A, Tj =125°C Min. 5 2.3 1.9 Typ. Max. 7 2.8 Unit V V V
DYNAMIC
Symbol gfs Cies Coes Cres Qg Qge Qgc tscw Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time VCE = 480V, IC = 20 A, VGE = 15V Vce = 0.5 BVces , VGE = 15 V, Tj = 125°C , RG = 10 Ω 10 Test Conditions VCE = 25 V , IC =20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 8 1560 190 38 85 14.4 51 115 Max. Unit S pF pF pF nC nC nC µs
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STGW20NB60KD
SWITCHING ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 20 A RG = 10Ω , VGE = 15 V VCC= 480 V, IC = 20 A RG=10Ω VGE = 15 V,Tj = 125°C Min. Typ. 40 36 350 650 Max. Unit ns ns A/µs µJ
SWITCHING OFF
Symbo.