N-CHANNEL IGBT
®
STGW12NB60HD
N-CHANNEL 12A - 600V TO-247 PowerMESH™ IGBT
PRELIMINARY DATA
T YPE STGW 12NB60HD
s
V CES 600 V
V CE(s...
Description
®
STGW12NB60HD
N-CHANNEL 12A - 600V TO-247 PowerMESH™ IGBT
PRELIMINARY DATA
T YPE STGW 12NB60HD
s
V CES 600 V
V CE(sat) < 2.8 V
IC 30 A
s s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE
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DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature
o o
Value 600 ± 20 24 12 96 120 0.96 -65 to 150 150
Unit V V A A A W W /o C
o o
C C
() Pulse width limited by safe operating area
June 1999
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STGW12NB60HD
THERMAL DATA
R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Th...
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