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STGW12NB60H
N-CHANNEL 12A - 600V TO-247 PowerMESH™ IGBT
PRELIMINARY DATA
T YPE STGW 12NB60H
s
V CES 600 V
V CE(sat) < 2.8 V
IC 12 A
s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT
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DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V ECR V GE IC IC I CM ( • ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 600 20 ± 20 24 12 96 120 0.96 -65 to 150 150
Unit V V V A A A W W /o C
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C C
(•) Pulse width limited by safe operating area
June 1999
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THERMAL DATA
R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 1.04 30 0.1 C/W oC/W o C/W
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ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 µ A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 10 100 ± 100 Typ. Max. Unit V µA µA nA
V CE = Max Rating V CE = Max Rating V GE = ± 20 V
ON (∗)
Symbol V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions IC = 250 µ A IC = 12 A IC = 12 A Min. 3 2.0 1.7 Typ. Max. 5 2.8 Unit V V V
Tj = 125 oC
DYNAMIC
Symbol gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions I C = 12 A f = 1 MHz V GE = 0 Min. Typ. 9.5 950 120 27 68 10 30 48 Max. Unit S pF pF pF nC nC nC A
V CE = 480 V
IC = 12 A
VGE = 15 V
V clamp = 480 T j = 150 o C
R G =10 Ω
SWITCHING ON
Symbol t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 Ω T j = 125 o C I C = 12 A R G = 10Ω I C = 12 A V GE = 15 V Min. Typ. 5 46 1000 290 Max. Unit ns ns A/ µ s µJ
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ELECTRICAL CHARACTERISTICS (continued) SWITCHI.