STGB7NB60KD

STGP7NB60KD STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT ADVANCED DATA TYPE STGP7NB60KD STGP7NB60KDFP STGB7NB60KD s s s s s s s s VCES 600 V 600 V 600 V VCE(sat) < 2.8 V < 2.8 V < 2.8 V IC 7A 7A 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 2 3 1 2 TO-220 3 1 TO-220FP D2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STGP7NB60KD STGB7NB60KD VCES VECR VGE IC IC ICM (n) PTOT VISO Tstg Tj June 2002 Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 125°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) Storage Temperature Max. Operating Junction Temperature 80 0.64 -–65 to 150 150 S...