N-CHANNEL IGBT
®
STGP7NB60HD STGP7NB60HDFP
N-CHANNEL 7A - 600V TO-220/FP PowerMESH™ IGBT
TYPE STGP7NB60HD STGP7NB60HDFP
s
V CES 600 ...
Description
®
STGP7NB60HD STGP7NB60HDFP
N-CHANNEL 7A - 600V TO-220/FP PowerMESH™ IGBT
TYPE STGP7NB60HD STGP7NB60HDFP
s
V CES 600 V 600 V
V CE(sat) < 2.8 V < 2.8 V
IC 7 A 7 A
s s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE
3 1 2
1 2
3
TO-220
TO-220FP
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max. O perating Junct ion T emperature 600 ± 20 14 7 56 80 0.64 -65 to 150 150 Value STGP7NB60HD ST GP7NB60HDFP 600 ± 20 13 6 56 35 0.28 V V A A A W W /o C
o o
Unit
C C
() Pulse width limited by safe operating area
June 1999
1/9
STGP7NB60HD/FP
THERMAL DATA
TO-220 R thj -...
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