STGP3NB60HD

® STGP3NB60HD STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT TYPE STGP3NB60HD STGP3NB60HDFP s V CES 600 V 600 V V CE(sat) < 2.8 V < 2.8 V IC 3 A 3 A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max. O perating Junct ion T emperature 600 ± 20 6 3 24 70 0.56 -65 to 150 150 Value STG P7NB60HD STGP7NB60HDF P 600 ± 20 6 3 24 35 0.28 V V A A A W W /o C o o Unit C C () Pulse width limited by max. junction temperature June 1999 1/9 STGP3NB60HD/FP THERMAL DATA TO-220 R ...