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STGF20NB60S

ST Microelectronics

N-CHANNEL IGBT

STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH™ IGBT Table 1: General Features TYPE STGF20NB60S VCES 600 V VCE(sat)...


ST Microelectronics

STGF20NB60S

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STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH™ IGBT Table 1: General Features TYPE STGF20NB60S VCES 600 V VCE(sat) (Max) @25°C < 1.7 V IC @100°C 13 A Figure 1: Package LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency to applications (<1kHz). 3 1 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER STATIC RELAYS MOTOR CONTROL Table 2: Order Code PART NUMBER STGF20NB60S MARKING GF20NB60S PACKAGE TO-220FP PACKAGING TUBE Rev. 2 February 2005 1/10 STGF20NB60S Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#) Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation withstand voltage AC (t=1sec, Tc=25°C) Storage Temperature Operating Junction Temperature range Value 600 20 ±20 24 13 70 40 0.32 2500 –55 to 150 Unit V V V A A A W W/°C V °C ( ) Pulse width limited by safe operating area Table 4: Thermal Data Min. Rthj-case Rthj-amb...




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