STGF10NB60SD

STGF10NB60SD N-CHANNEL 10A - 600V TO-220FP PowerMESH™ IGBT TYPE STGF10NB60SD s VCES 600 VCE(sat) (Max) @25°C < 1.8 V IC @100°C 10 A s s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 2 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (q ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 20 10 80 25 0.2 2500 –65 to 150 150 Unit V V V A A A W W/°C V °C °C (q ) Pulse width limited by safe operating area June 2003 1/8 STGF10NB60SD THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 5 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS...