STGB3NB60SD

STGB3NB60SD N-CHANNEL 3A - 600V D2PAK Power MESH™ IGBT TYPE STGB3NB60SD s VCES 600 V VCE(sat) <1.5 V Ic 3A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 D2PAK TO-263 (suffix“T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM() Ptot Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuos) at Tc=25°C Collector Current (continuos)at Tc=100°C Collector Current (pulsed) Total Dissipation at Tc = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 ± 20 6 3 25 70 0.46 –60 to 175 175 Unit V V A A A W W/°C °C °C ()Pulse width limited by safe operating area. November 2000 1/8 STGB3NB60SD THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 2.14 62.5 0.5 °C/W °C/W °C/W ELECTRICAL CHA...