STGB10N60L

® STGB10N60L N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT TYPE STGB10N60L s V CES 600 V V CE(sat ) < 1.95 V IC 10 A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 D2PAK TO-263 APPLICATIONS s ELECTRONIC IGNITION s LIGHT DIMMER s STATIC RELAYS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 25 ± 15 25 20 100 125 0.83 -65 to 175 175 Un it V V V A A A W W /o C o o C C () Pulse width limited by safe operating area June 1999 1/8 STGB10N60L THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.1 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified) OFF Symbo l V BR(c es) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = ...