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XN04504 Dataheets PDF



Part Number XN04504
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet XN04504 DatasheetXN04504 Datasheet (PDF)

Composite Transistors XN04504 (XN4504) Silicon NPN epitaxial planar type For amplification of low-frequency output 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit: mm 0.16+0.10 –0.06 1.50+0.25 –0.05 0.30+0.10 –0.05 0.50+0.10 –0.05 10˚ ■ Basic Part Number • 2SD1328 × 2 1.1+0.2 –0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage te.

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Composite Transistors XN04504 (XN4504) Silicon NPN epitaxial planar type For amplification of low-frequency output 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit: mm 0.16+0.10 –0.06 1.50+0.25 –0.05 0.30+0.10 –0.05 0.50+0.10 –0.05 10˚ ■ Basic Part Number • 2SD1328 × 2 1.1+0.2 –0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PT Tj Tstg 25 20 12 0.5 1 300 150 −55 to +150 V V V A A mW °C °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 Parameter Symbol Rating Unit Marking Symbol: 5X Internal Connection 4 5 6 Tr2 1.1+0.3 –0.1 ■ Absolute Maximum Ratings Ta = 25°C (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 3 2 1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Tr1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistance *2 *1 3 Conditions Min 25 20 12 2 Typ 1 Max Unit V V V 100 nA  V V MHz pF Ω Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 60 0.13 800 0.40 1.2 200 10 1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 kΩ *2: Ron test circuit IB = 1 mA VB VV VB × 1 000 (Ω) VA − VB f = 1 kHz V = 0.3 V VA Ron = Note) The part number in the parenthesis shows conventional part number. SJJ00078BED 0.4±0.2 ■ Features 2.8+0.2 –0.3 5˚ Publication date: February 2004 1 XN04504 PT  Ta 500 IC  VCE IB = 4.0 mA Ta = 25°C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 102 IC / IB = 25 1.2 Total power dissipation PT (mW) 400 1.0 300 Collector current IC (A) 10 1 200 Ta = 75°C 10−1 25°C −25°C 100 0.2 0 0 40 80 120 160 0 0 1 2 3 4 5 6 10−2 10−2 10−1 1 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC 102 IC / IB = 10 1 200 hFE  IC VCE = 2 V fT  I E 400 350 VCB = 10 V Ta = 25°C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE Transition frequency fT (MHz) 1 000 10 300 250 200 150 100 50 800 Ta = 75°C 600 25°C −25°C 25°C 1 Ta = −25°C 75°C 400 10−1 200 10−2 10−2 10−1 1 10 0 10−2 10−1 1 10 0 −1 −10 −102 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 24 f = 1 MHz IE = 0 Ta = 25°C 20 16 12 8 4 0 1 10 102 Collector-base voltage VCB (V) 2 SJJ00078BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specific.


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