SUM65N20-30

SUM65N20-30 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.030 @ VGS = 10 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 65 a APPLICATIONS D Automotive – 42-V EPS and ABS – DC/DC Conversion – Motor Drives D Isolated DC/DC converters – Primary-Side Switch – High Voltage Synchronous Rectifier D TO-263 G G D S S N-Channel MOSFET Top View SUM65N20-30 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 65a 37a 140 35 61 375c 3.75 –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71702 S-04920—Rev. A, 15-Oct-01 www.vishay.com PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 0.4 Unit _C/W 1 SUM65N20-30 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) ...