Document
SUM50N06-16L
New Product
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.016 @ VGS = 10 V 0.022 @ VGS = 4.5 V
ID (A)
50 43
D TrenchFETr Power MOSFET D 175_C Junction Temperature
APPLICATIONS
D 12-V Automotive Systems − Load Switch − Motor Drive − DC/DC
D
TO-263
DRAIN connected to TAB G D S Top View SUM50N06-16L
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
60 "20 50 35 100 40 80 93b 3.7c −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72048 S-22124—Rev. A, 25-Nov-02 www.vishay.com
Symbol
RthJA RthJC
Limit
40 1.6
Unit
_C/W
1
SUM50N06-16L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 0.017 50 50 0.013 0.016 0.028 0.036 0.022 S W 60 1.0 2.0 3.0 "100 1 50 150 A mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.8 W ID ] 50 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, , VGS = 10 V, , ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1325 265 115 25 5.5 6.5 10 9 25 7 20 20 50 15 ns 40 nC pF
Gate-Drain Chargec Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 50 A, , di/dt = 100 A/ms IF = 50 A, VGS = 0 V 1.0 35 2.3 0.04 50 100 1.5 70 4 0.14 A V ns A mC
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 72048 S-22124—Rev. A, 25-Nov-02
SUM50N06-16L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100 VGS = 10 thru 6 V 80 I D − Drain Current (A) 5V I D − Drain Current (A) 80 100
Transfer Characteristics
60
60
40
4V
40 TC = 125_C 20 25_C 0 −55_C 3 4 5 6
20
2 V, 3 V
0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V)
0
1
2
VGS − Gate-to-Source Voltage (V)
Transconductance
70 60 g fs − Transconductance (S) 50 125_C 40 30 20 10 0 0 10 20 30 40 50 60 TC = −55_C 25_C r DS(on) − On-Resistance ( Ω ) 0.03 0.04
On-Resistance vs. Drain Current
0.02
VGS = 4.5 V VGS = 10 V
0.01
0.00 0 20 40 60 80 100
ID − Drain Current (A) 2000 1750 V GS − Gate-to-Source Voltage (V) 1500 1250 1000 750 500 250 0 0 Crss 15 30 45 60 Coss 8
ID − Drain Current (A) 10 VDS = 30 V ID = 40 A
Capacitance
Gate Charge
C − Capacitance (pF)
Ciss
6
4
2
0 0 5 10 15 20 25 VDS − Drain-to-Source Voltage (V) Qg − Total Gate Charge (nC)
Document Number: 72048 S-22124—Rev. A, 25-Nov-02
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SUM50N06-16L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 20 A I S − Source Current (A)
100
Source-Drain Diode Forward Voltage
r DS(on) − On-Resistance (W ) (Normalized)
2.0
1.5
TJ = 150_C 10 TJ = 25_C
1.0
0.5
0.0 −50
−25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
1.5
TJ − Junction Temperature (_C)
VSD − Source-to-Drain Voltage (V)
1000
80
Drain Source Breakdown vs. Junction Temperature
100 V (BR)DSS (V) IAV (A) @ TA = 25_C I Dav (a)
76
ID = 10 mA
72
10
68 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec)
64
60 −50
−25
0
25
50
75
100
125
150
175
TJ − Junction Temperature (_C)
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Document Number: 72048 S-22124—Rev. A, 25-Nov-02
SUM50N06-16L
New Product
THERMAL RATINGS
Vishay Siliconix
60 50 I D − Drain Current (A) 40 30 20 10 0 0
Drain Current vs. Case Temperature
200 100
Safe Operating Area
Limited by rDS(on) 10.