SSM3J05FU

SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications · · · Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V) : Ron = 4.0 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±12 -200 -400 150 150 -55~150 Unit V V mA Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC JEITA TOSHIBA ― SC-70 2-2E1E Note 1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm ´ 3) Weight: 0.006 g (typ.) Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2003-03-27 SSM3J05FU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton ...