SSM3K16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications Analog...
SSM3K16FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications Analog Switching Applications
Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
20
V
VGSS
±10
V
ID
100
mA
IDP
200
PD(Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3)
Unit: mm
JEDEC JEITA TOSHIBA
― SC-70 2-2E1E
0.6 mm 1.0 mm
Marking
3
Equivalent Circuit
3
DS
1
2
1
2
Handling Precaution
When handling individual dev...