SSM3K03FE

SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications · · · · 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 -55~150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2HA1B Weight: 2.3 mg (typ.) Marking Equivalent Circuit 1 2003-03-27 SSM3K03FE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min ¾ 20 ¾ 0.7 25 ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 50 4 11.0 3.3 9.3 0.16 0.19 Max 1 ¾ 1 1.3 ¾ 12 ¾ ¾ ¾ ¾ ¾ Unit mA V mA V mS W pF pF pF ms Switching Time Test Circuit (a) Test circuit (b)...