Document
SiP41109/41110
New Product
Vishay Siliconix
Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
FEATURES
D D D D D D D D D PWM With Tri-State Enable 12-V Low-Side Gate Drive (SiP41109) 8-V Low-Side Gate Drive (SiP41110) Undervoltage Lockout Internal Bootstrap Diode Switching Frequency Up to 1 MHz 30-ns Max Propagation Delay Drive MOSFETs In 5- to 48-V Systems Adaptive Shoot-Through Protection
APPLICATIONS
D D D D D Multi-Phase DC/DC Conversion High Current Low Voltage DC/DC Converters High Frequency DC/DC Converters Mobile and Desktop Computer DC/DC Converters Core Voltage Supplies for PC Micro-Processors
DESCRIPTION
The SiP41109 and SiP41110 are high-speed half-bridge MOSFET drivers for use in high frequency, high current, multiphase dc-to-dc synchronous rectifier buck power supplies. They are designed to operate at switching frequencies up to 1 MHz. The high-side driver is bootstrapped to allow driving n-channel MOSFETs. They feature adaptive shoot-through protection to prevent simultaneous conduction of the external MOSFETs. There are two options available for the voltage of the high-side and low-side drivers. In the SiP41109, the regulator supplies gate drive voltage to the high-side driver and VCC supplies the low-side driver. in the SiP41110, the regulator supplies the high- and low-side gate drive voltage. The SiP41109 and SiP41110 are assembled in a lead (Pb)-free 8-pin SOIC package for operation over the industrial operating range (−40 _C to 85 _C).
TYPICAL APPLICATION CIRCUIT
+5 to 48 V +12 V
PVcc
VCC
BOOT
UGATE
SiP41109/41110
Controller PWM (Tri-State) PHASE VOUT
LGATE
GND
GND
GND
Document Number: 73023 S-51104—Rev. A, 13-Jun-05
www.vishay.com
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SiP41109/41110
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
V CC, PVCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 15 V BOOT, PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 55 V BOOT to PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 15 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C Power Dissipationa SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 770 mW Thermal Impedance (QJA)b SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130_C/W Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 7.7 mW/_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.8 to 13.2 V VLX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 V CBOOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 nF to 1 mF BOOT to PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Power Supplies
Supply Voltage Quiescent Current Supply Current Tristate (Shutdown) Current VCC ICCQ IDD ICCT PWM Non-Switching fPWM = 100 kHz, kHz CLOAD = 3 nF PWM = Open SiP41109 SiP41110 10.8 5.6 12.5 11.0 850 1200 mA 13.2 9.5 mA V
Limits Mina Typb Maxa Unit
Symbol
VCC = 12 V, VBOOT − VPHASE = 8 V TA = −40 to 85_C
Reference Voltage
Break-Before-Make VBBM 2.5 V
PWM Input
Input High Input Low Bias Current Tristate Threshold High Low VIH VIL IB VTSH VTSL tTST 240 PWM 5 V or 0 V 3.0 2.0 "600 4.0 VCC 1.0 "1000 V mA V ns
Tristate Holdoff Timeoutc
Bootstrap Diode
Forward Voltage VF IF = 40 mA, TA = 25_C 0.70 0.85 1.0 V
MOSFET Drivers
High-Side Drive Currentc IPKH(source) IPKH(sink) IPKL(source) Low Side Drive Currentc Low-Side IPKL(sink) IPKL(source) IPKL(sink) www.vishay.com VBOOT − VPHASE = 8 V VPVCC = 8 V VPVCC = 12 V SiP41110 SiP41109 0.8 1.0 0.9 1.2 1.4 1.8 Document Number: 73023 S-51104—Rev. A, 13-Jun-05 A
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SiP41109/41110
New Product
SPECIFICATIONSa
Test Conditions Unless Specified Parameter MOSFET Drivers
High Side Driver Impedance High-Side RDH(source) RDH(sink) RDL(source) Low Side Driver Impedance Low-Side RDL(sink) RDL(source) RDL(sink) High-Side Rise Time High-Side Fall Time High-Side Ri.