EMF9

EMF9 Transistors Power management (dual transistors) EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !External dimensions (Units : mm) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 0.5 !Structure Silicon epitaxial planar transistor ROHM : EMT6 0.13 Each lead has same dimensions Abbreviated symbol : F9 !Equivalent circuits (3) (2) (1) Tr2 Tr1 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF9 EMT6 F9 T2R 8000 0.5 0.5 1.0 1.6 1/5 EMF9 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Tj Junction temperature Tstg Range of storage temperature ∗ Single pulse PW=1ms Limits 15 12 6 500 1.0 150 −55~+150 Unit V V V mA A °C °C ∗ Tr2 Symbol Parameter VDSS Drain-source voltage VGSS Gate-source voltage ID Continuous Drain current IDP Pulsed IDR Continuous Reverse drain current IDRP Pulsed Tch Channel temperature Tstg Range of storage temperature ∗ PW≤10ms Duty cycle≤50% Limits 30 ±20 100 200 100 200 150 −55~+150 Unit V V mA mA mA mA °C °C ∗ ∗ Tr1, Tr2 Parameter Total power dissipation Symbol PD Limits 150(TOTAL) Unit mW ∗ ∗ 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteri...