FLL600IQ-2

FLL600IQ-2 FEATURES Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS Solid State Power Amplifier. PCS/PCN Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 125 -65 to +175 +175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power...