DE475-102N21A

DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 Maximum Ratings 1000 1000 ±20 ±30 24 144 21 30 5 >200 1800 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = = 1000 V 24 A 0.41 Ω 1800W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol RDS(on) PDC DRAIN Tc = 25°C Derate 4.0W/°C above 25°C Tc = 25°C 730 4.5 0.08 0.20 SD1 SD2 Test Conditions Characteristic Values Features TJ = 25°C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 ±100 50 1 0.41 V nA µA mA Ω S +175 °C °C +175 °C °C g Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − − cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or oth...